IRLML2244TRPBF hexfet power mosfet micro3 tm (sot-23) IRLML2244TRPBF features and benefits features benefits s g 1 2 d 3 application(s) ?
low r ds(on) ( 54m ) lower switching losses industry-standard pinout multi-vendor compatibility compatible with existing surface mount techniques results in easier manufacturing rohs compliant containing no lead, no bromide and no halogen ? environmentally friendly msl1, consumer qualification increased reliability v ds -20 v v gs max 12 v r ds(on) max (@v gs = -4.5v) 54 m r ds(on) max (@v gs = -2.5v) 95 m absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ -4.5v i d @ t a = 70c continuous drain current, v gs @ -4.5v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient ??? 100 r ja junction-to-ambient (t<10s) ??? 99 max. -4.3 -3.4 -55 to + 150 12 0.01 -20 1.3 0.8 -18 w c/w a product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
g d s electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.01 ??? v/c ??? 42 54 ??? 71 95 v gs(th) gate threshold voltage -0.4 ??? -1.1 v i dss ??? ??? 1 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 r g internal gate resistance ??? 8.9 ??? gfs forward transconductance 6.5 ??? ??? s q g total gate charge ??? 6.9 ??? q gs gate-to-source charge ??? 1.0 ??? q gd gate-to-drain ("miller") charge ??? 2.9 ??? t d(on) turn-on delay time ??? 7.0 ??? t r rise time ??? 12 ??? t d(off) turn-off delay time ??? 34 ??? t f fall time ??? 25 ??? c iss input capacitance ??? 570 ??? c oss output capacitance ??? 160 ??? c rss reverse transfer capacitance ??? 110 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 21 32 ns q rr reverse recovery charge ??? 9.0 14 nc ??? ??? ??? ??? pf a -1.3 -18 v dd =-10v na nc ns v ds = v gs , i d = -10 a v ds =-16v, v gs = 0v v ds = -16v, v gs = 0v, t j = 125c r ds(on) v gs = -2.5v, i d = -3.4a static drain-to-source on-resistance drain-to-source leakage current a m conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -4.5v, i d = -4.3a mosfet symbol showing the v ds =-10v conditions v gs = -4.5v v gs = 0v v ds = -16v ? = 1.0khz r g = 6.8 v gs = -4.5v di/dt = 100a/ s v gs = 12v v gs = -12v t j = 25c, i s = -4.3a, v gs = 0v integral reverse p-n junction diode. v ds = -10v, i d =-4.3a i d = -4.3a i d = -1a t j = 25c, v r = -16v, i f =-4.3a IRLML2244TRPBF product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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